voidless-hermetically-sealed ultrafast recovery glass re c tifier s microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2008 2-25-2008 rev a www. microsemi . com scottsdale division 1n5807cb thru 1n5811cb 1n5807cbC1n5811cb descri pt i on appearan ce this ultrafast recovery rectifier diode series is military qualified to mil-prf-19500/742 and is ideal for high-reliability applications where a failure cannot be tolerated. these industry- recognized 6.0 amp rated rectifiers for worki ng peak reverse voltages from 50 to 150 volts are hermetically seal ed with voidless-glass construction using an internal category iii metallurgical bond. these devices are also available in surface mount melf package configurations by adding a us suffix (see separate data sheet for 1n5807cbus thru 1n5811cbus). microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both thro ugh-hole and surface mount packages. e package important: for the most current data, consult microsemis website: http://www.microsemi.com feat u res appli cat i on s / ben efi t s ? popular jedec registered 1n5807 to 1n5811 series ? voidless hermetically sealed glass package ? extremely robust construction ? triple-layer passivation ? internal category iii metallurgical bonds ? jan, jantx, & jantxv available per mil-prf-19500/742 ? further screening options are available for jans in accordance with mil-prf-19500/742 by using a sp prefix ? surface mount equivalents also available in a square end- cap melf configuration with us suffix (see separate data sheet for 1n5807cbus thru 1n5811cbus) ? ultrafast recovery 6 amp rectifier series 50 to 150 v ? military and other high-reliability applications ? switching power supplies or other applications requiring extremely fast switching & low forward loss ? high forward surge current capability ? low thermal resistance ? controlled avalanche with peak reverse power capability ? inherently radiation hard as described in microsemi micronote 050 m ax i m u m rat i n gs m ech an i cal an d pack agi n g ? junction temperature: -65 o c to +175 o c ? storage temperature: -65 o c to +175 o c ? average rectified forward current (i o ): 6 a @ t l = 75oc at 3/8 inch lead length (see note 1) ? thermal resistance: 22 oc/w junction to lead (l=.375 in) ? thermal impedance: 1.5 oc/w @ 10 ms heating time ? forward surge current (8.3 ms half sine) 125 amps ? capacitance: 60 pf at 10 volts, f = 1 mhz ? solder temperature: 260oc for 10 s (maximum) ? case: hermetically sealed voidless hard glass with tungsten slugs ? terminations: axial-leads are tin/lead (sn/pb) over copper. ? marking: body painted and part number, etc. ? polarity: cathode indicated by band ? tape & reel option: standard per eia-296 ? weight: 750 mg ? see package dimensions on last page elect ri cal ch aract eri st i cs type working peak reverse voltage v rwm breakdown voltage (min.) @ 100 a v br average rectified current i o1 @t l =75 o c (note 1) average rectified current i o2 @t a =55 o c note 2 maximum forward voltage @ 4 a (8.3 ms pulse) v f reverse current (max) @ v rwm i r surge current (max) i fsm (note 3) reverse recovery time (max) (note 4) t rr volts volts amps volts a amps ns 25 o c 100 o c 25 o c 125 o c 1n5807cb 1N5809CB 1n5811cb 50 100 150 60 110 160 6.0 6.0 6.0 3.0 3.0 3.0 0.875 0.875 0.875 0.800 0.800 0.800 5 5 5 525 525 525 125 125 125 30 30 30 note 1: rated at t l = 75oc at 3/8 inch lead length. derate at 60 ma/oc for t l above 75oc. note 2: derate linearly at 25 ma/oc above t a = 55oc. this rating is typical for pc boards wh ere thermal resistance from mounting point to ambient is sufficiently controlled where t j(max ) does not exceed 175oc note 3: t a = 25 o c @ i o = 3.0 a and v rwm for ten 8.3 ms surges at 1 minute intervals note 4: i f = 1.0 a, i rm = 1.0 a, i r(rec) = 0.10 a and di/dt = 100 a/s min downloaded from: http:///
voidless-hermetically-sealed ultrafast recovery glass re c tifier s www. microsemi . com scottsdale division 1n5807cb thru 1n5811cb 1n5807cbC1n5811cb sy m bols & defi n i t i on s symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v rwm working peak reverse voltage: the maximum peak voltage that can be app lied over the operating temperature range. v f maximum forward voltage: the maximum forward volt age the device will exhibit at a specified current. i r maximum leakage current: the maximum leakage curre nt that will flow at the specified voltage and temperature. c capacitance: the capacitance in pf at a frequency of 1 mhz and specified voltage t rr reverse recovery time: the time interval betwe en the instant the current passes through zero when changing from the forward direction to the reverse di rection and a specified recovery decay point after a peak reverse current is reached. graph s f i g u r e 1 f i g u r e 2 typical forward current typical reverse current vs. voltage vs. forward voltage figure 3 figure 4 output current vs lead temperature forward pulse current vs. duration microsemi scottsdale division page 2 copyright ? 2008 2-25-2008 rev a 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 downloaded from: http:///
voidless-hermetically-sealed ultrafast recovery glass re c tifier s www. microsemi . com scottsdale division 1n5807cb thru 1n5811cb 1n5807cbC1n5811cb figure 6 figure 7 maximum lead temp. vs. pd multiple surge current vs. duration pack age di m en si on s lead tolerance = + .002 -.003 in *includes sections of the lead or fillet over which the lead diameter is uncontrolled. microsemi scottsdale division page 3 copyright ? 2008 2-25-2008 rev a 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 downloaded from: http:///
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